activity
20122015
most citedFew Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

52 citations · 155 across the 6 of their papers we have counts for

collaborators

6 papers

quant-ph2015★ 20 cited

Effective Hamiltonian for two interacting double-dot exchange-only qubits and their controlled-NOT operations

E. Ferraro, M. De Michielis, M. Fanciulli +1

Double-dot exchange-only qubit represents a promising compromise between high speed and simple fabrication in solid-state implementations. A couple of interacting double-dot exchan…

cond-mat.mes-hall2015★ 15 cited

Valley blockade and multielectron spin-valley Kondo effect in silicon

A. Crippa, M. L. V. Tagliaferri, D. Rotta +6

We report on the valley blockade and the multielectron Kondo effect generated by an impurity atom in a silicon nano field effect device. According to the spin-valley nature of tunn…

quant-ph2014

Maximum density of quantum information in a scalable CMOS implementation of the hybrid qubit architecture

Davide Rotta, Marco De Michielis, Elena Ferraro +2

Scalability from single qubit operations to multi-qubit circuits for quantum information processing requires architecture-specific implementations. Semiconductor hybrid qubit archi…

quant-ph2014★ 27 cited

Universal Set of Quantum Gates for Double-Dot Exchange-Only Spin Qubits with Intradot Coupling

Marco De Michielis, Elena Ferraro, Marco Fanciulli +1

We present a universal set of quantum gate operations based on exchange-only spin qubits in a double quantum dot, where each qubit is obtained by three electrons in the (2,1) filli…

quant-ph2013★ 41 cited

Effective Hamiltonian for the hybrid double quantum dot qubit

E. Ferraro, M. De Michielis, G. Mazzeo +2

Quantum dot hybrid qubits formed from three electrons in double quantum dots represent a promising compromise between high speed and simple fabrication for solid state implementati…

cond-mat.mes-hall2012★ 52 cited

Few Electron Limit of n-type Metal Oxide Semiconductor Single Electron Transistors

Enrico Prati, Marco De Michielis, Matteo Belli +14

We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built…