Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs

Mehdi Salmani-Jelodar, Hesameddin Ilatikhameneh, SungGeun Kim +2

A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provid…