93 citations · 93 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2015★ 93 cited
Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs
Mehdi Salmani-Jelodar, Hesameddin Ilatikhameneh, SungGeun Kim +2
A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provid…
cond-mat.mes-hall2011
Relating electronic structure to thermoelectric device performance
Shuaib Salamat, Abhijeet Paul, Mehdi Salmani-Jelodar +3
Realistic thermoelectric modeling and simulation tools are needed to explain the experiments and for device design. In this paper, we present a simple computational technique to ma…