5 papers
Ballistic electron transport described by a generalized Schrödinger equation
Giulia Elena Aliffi, Giovanni Nastasi, Vittorio Romano
We propose a Schrödinger equation of arbitrary order for modeling charge transport in semiconductors operating in the ballistic regime. This formulation incorporates non-parabolic…
A discontinuous Galerkin approach for simulating graphene-based electron devices via the Boltzmann transport equation
Giovanni Nastasi, Vittorio Romano
Electron devices based on graphene have lately received a considerable interest; in fact, they could represent the ultimate miniaturization, since the active area is only one atom…
Spatially Mapping Phonon Drag in Ultrascaled 5-nm Silicon Nanowire Field-Effect Transistor Based on a Quantum Hydrodynamic Formalism
Houssem Rezgui, Giovanni Nastasi, Manuel Marcoux +1
The growing demand for better performance and lower thermal energy dissipation in nanoelectronic devices is the major driving force of the semiconductor industry's quest for future…
Ballistic electron transport described by a fourth-order Schrödinger equation
Giulia Elena Aliffi, Giovanni Nastasi, Vittorio Romano
A fourth-order Schrödinger equation for the description of charge transport in semiconductors in the ballistic regime is proposed with the inclusion of non-parabolic effects in th…
Uncertainty quantification for charge transport in GNRs through particle Galerkin methods for the semiclassical Boltzmann equation
Andrea Medaglia, Giovanni Nastasi, Vittorio Romano +1
In this article, we investigate some issues related to the quantification of uncertainties associated with the electrical properties of graphene nanoribbons. The approach is suited…