most citedSuppression of Surface-Originated Gate-Lag by a Dual-Channel AlN/GaN HEMT Architecture

13 citations · 13 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mes-hall2015★ 13 cited

Suppression of Surface-Originated Gate-Lag by a Dual-Channel AlN/GaN HEMT Architecture

David A. Deen, David F. Storm, D. Scott Katzer +2

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-state related gate lag.…