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K. F. Yang

1 paper here

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author position
  • middle author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
ORCID 0000-0002-1753-6464

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most citedCharacterization of InSb quantum wells with atomic layer deposited gate dielectrics

15 citations · 15 across the 1 of their papers we have counts for

collaborators

1 paper

cond-mat.mes-hall2012★ 15 cited

Characterization of InSb quantum wells with atomic layer deposited gate dielectrics

M. M. Uddin, H. W. Liu, K. F. Yang +4

We report magnetotransport measurements of a gated InSb quantum well (QW) with high quality Al2O3 dielectrics (40 nm thick) grown by atomic layer deposition. The magnetoresistance…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.