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E. N. Mokhov

3 papers here

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author2
  • last author1

Across the 3 of 3 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci3
ORCID 0000-0002-2318-8849
same name
  • E. N. Mokhov — 4 papers, h 18

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedSymmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride

19 citations · 27 across the 3 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2024★ 8 cited

Optical Spin Initialization of Nitrogen Vacancy Centers in a 28Si-Enriched 6H-SiC Crystal for Quantum Technologies

F. F. Murzakhanov, M. A. Sadovnikova, G. V. Mamin +4

High-spin defect centers in crystal matrices are used in quantum computing technologies, highly sensitive sensors, and single-photon sources. In this work, optically active nitroge…

cond-mat.mtrl-sci2023

Exploring the Properties of the V_B^- Defect in hBN: Optical Spin Polarization, Rabi Oscillations, and Coherent Nuclei Modulation

Irina N. Gracheva, Margarita A. Sadovnikova, Fadis F. Murzakhanov +3

Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band ga…

cond-mat.mtrl-sci2023★ 19 cited

Symmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride

Irina N. Gracheva, Fadis F. Murzakhanov, Georgy V. Mamin +4

The concept of optically addressable spin states of deep level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently disc…

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