845 citations · 2.9k across the 8 of their papers we have counts for
11 papers
Valley Polarization by Spin Injection in a Light-Emitting van der Waals Heterojunction
Oriol Lopez Sanchez, Dmitry Ovchinnikov, Shikhar Misra +2
The band structure of transition metal dichalcogenides (TMDCs) with valence band edges at different locations in the momentum space could be harnessed to build devices that operate…
Disorder engineering and conductivity dome in ReS2 with electrolyte gating
Dmitry Ovchinnikov, Fernando Gargiulo, Adrien Allain +5
Atomically thin rhenium disulphide (ReS2) is a member of the transition metal dichalcogenide (TMDC) family of materials characterized by weak interlayer coupling and a distorted 1T…
Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2
Sajedeh Manzeli, Adrien Allain, Amirhossein Ghadimi +1
The bandgap of MoS2 is highly strain-tunable which results in the modulation of its electrical conductivity and manifests itself as the piezoresistive effect while a piezoelectric…
Optically Active Quantum Dots in Monolayer WSe
Ajit Srivastava, Meinrad Sidler, Adrien V. Allain +3
Semiconductor quantum dots have emerged as promising candidates for implementation of quantum information processing since they allow for a quantum interface between stationary spi…
Electrical Transport Properties of Single-Layer WS2
Dmitry Ovchinnikov, Adrien Allain, Ying-Sheng Huang +2
We report on the fabrication of field-effect transistors based on single and bilayers of the semiconductor WS2 and the investigation of their electronic transport properties. We fi…
Electron and Hole Mobilities in Single-Layer WSe2
Adrien Allain, Andras Kis
Single-layer transition metal dichalcogenide (TMD) WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band-gap. Due to low doping levels…