26 citations · 42 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2016★ 26 cited
Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition
Nobuaki Takahashi, Kosuke Nagashio
The integration of high-k oxide on graphene using atomic layer deposition requires an electrically reliable buffer layer. In this study, Y was selected as the buffer layer due to t…
cond-mat.mtrl-sci2015★ 16 cited
Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs
N. Takahashi, K. Watanabe, T. Taniguchi +1
The combination of h-BN and high-k dielectrics is required for a top gate insulator in miniaturized graphene field-effect transistors because of the low dielectric constant of h-BN…