47 citations · 78 across the 6 of their papers we have counts for
3 papers · 1 filter
Conductance of a SET with a retarded dielectric layer in the gate capacitor
O. G. Udalov, N. M. Chtchelkatchev, S. A. Fedorov +1
We study conductance of a single electron transistor (SET) with a ferroelectric (or dielectric) layer placed in the gate capacitor. We assume that ferroelectric (FE) has a retarded…
Memory effect in ferroelectric single electron transistor: violation of conductance periodicity in the gate voltage
S. A. Fedorov, A. E. Korolkov, N. M. Chtchelkatchev +2
The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate…
Interplay of ferroelectricity and single electron tunneling
S. A. Fedorov, A. E. Korolkov, N. M. Chtchelkatchev +2
We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no lo…