Interplay of ferroelectricity and single electron tunneling

Abstract

We investigate the interplay of ferroelectricity and quantum electron transport at the nanoscale in the regime of Coulomb blockade. Ferroelectric polarization in this case is no longer the external parameter but should be self-consistently calculated along with electron hopping probabilities leading to new physical transport phenomena studying in this paper. These phenomena appear mostly due to effective screening of a grain electric field by ferroelectric environment rather than due to polarization dependent tunneling probabilities. At small bias voltages polarization can be switched by a single excess electron in the grain. In this case transport properties of SET exhibit the instability (memory effect).

References in corpus (7)

• Physics of thin-film ferroelectric oxides
• A ferroelectric memristor
• Ferroelectric PbTiO${}_3$/SrRuO${}_3$ superlattices with broken inversion symmetry
• Engineering polarization rotation in a ferroelectric superlattice
• Interplay of Coulomb Blockade and Ferroelectricity in Nano-Granular Materials
• Single Flux Transistor: the controllable interplay of Coherent Quantum Phase Slip and Flux quantization
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Cited by in corpus (6)

• Two-dimensional antiferroelectric tunnel junction
• Probing near-interface ferroelectricity by conductance modulation of a nano-granular metal
• Proximity coupling of granular film with ferroelectric substrate and giant electro-resistance effect
• Memory effect in ferroelectric single electron transistor: violation of conductance periodicity in the gate voltage
• Single electron tunneling with "slow" insulators
• Conductance of a SET with a retarded dielectric layer in the gate capacitor