Reaction-Drift Model for Switching Transients in Pr${}_{0.7}$Ca${}_{0.3}$MnO${}_3$ Based Resistive RAM

A. Khanna, S. Prasad, N. Panwar +1

Earlier, the DC hole-current modeling of PCMO RRAM by drift-diffusion (DD) including self-heating (SH) in TCAD (but without ionic transport) was able to explain the experimentally…