Reaction-Drift Model for Switching Transients in Pr${}_{0.7}$Ca${}_{0.3}$MnO${}_3$-Based Resistive RAM

Vivek Saraswat, Shankar Prasad, Abhishek Khanna +5

Pr${}_{0.7}$Ca${}_{0.3}$MnO${}_3$ (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling pe…