30 citations · 37 across the 3 of their papers we have counts for
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cond-mat.mes-hall2016★ 1 cited
Ab initio calculation of energy levels for phosphorus donors in silicon
J. S. Smith, A. Budi, M. C. Per +5
The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we c…
cond-mat.mes-hall2015★ 6 cited
Electronic transport in Si:P delta-doped wires
J. S. Smith, D. W. Drumm, A. Budi +3
Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we pr…