30 citations · 37 across the 3 of their papers we have counts for
3 papers
cond-mat.mes-hall2016★ 1 cited
Ab initio calculation of energy levels for phosphorus donors in silicon
J. S. Smith, A. Budi, M. C. Per +5
The s manifold energy levels for phosphorus donors in silicon are important input parameters for the design and modelling of electronic devices on the nanoscale. In this paper we c…
cond-mat.mes-hall2015★ 6 cited
Electronic transport in Si:P delta-doped wires
J. S. Smith, D. W. Drumm, A. Budi +3
Despite the importance of Si:P delta-doped wires for modern nanoelectronics, there are currently no computational models of electron transport in these devices. In this paper we pr…
cond-mat.mtrl-sci2012★ 30 cited
Ab initio calculation of valley splitting in monolayer δ-doped phosphorus in silicon
Daniel W. Drumm, Akin Budi, Manolo C. Per +2
The differences in energy between electronic bands due to valley splitting are of paramount importance in interpreting transport spectroscopy experiments on state-of-the-art quantu…