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cond-mat.str-el2016★ 10 cited
Electronic correlation effects and Coulomb gap in the Si(111)--Sn surface
A. B. Odobescu, A. A. Maizlakh, N. I. Fedotov +1
Electronic transport properties of the Si(111)--Sn surface formed on low doped Si substrates are studied using two-probe conductivity measurements and tun…
cond-mat.str-el2014★ 14 cited
Electron correlation effects in transport and tunneling spectroscopy of the Si(111)- surface
A. B. Odobescu, A. A. Maizlakh, S. V. Zaitsev-Zotov
Electronic properties of the Si(111)- surface are studied using four- and two-probe conductivity measurements and tunneling spectroscopy. We demonstrate that the tempera…