Electronic correlation effects and Coulomb gap in the Si(111)-$(\sqrt{3}\times \sqrt{3})$-Sn surface

A. B. Odobescu, A. A. Maizlakh, N. I. Fedotov +1

Electronic transport properties of the Si(111)-$(\sqrt{3}\times \sqrt{3})$-Sn surface formed on low doped Si substrates are studied using two-probe conductivity measurements and tun…