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20102017
most citedQuantum control and process tomography of a semiconductor quantum dot hybrid qubit

294 citations · 1.2k across the 15 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

8 papers · 1 filter

cond-mat.mes-hall2017★ 11 cited

Effects of charge noise on a pulse-gated singlet-triplet qubit

Zhenyi Qi, X. Wu, D. R. Ward +11

We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum…

cond-mat.mes-hall2014★ 178 cited

Two-axis control of a singlet-triplet qubit with an integrated micromagnet

Xian Wu, D. R. Ward, J. R. Prance +9

The qubit is the fundamental building block of a quantum computer. We fabricate a qubit in a silicon double quantum dot with an integrated micromagnet in which the qubit basis stat…

cond-mat.mes-hall2014★ 294 cited

Quantum control and process tomography of a semiconductor quantum dot hybrid qubit

Dohun Kim, Zhan Shi, C. B. Simmons +9

The similarities between gated quantum dots and the transistors in modern microelectronics - in fabrication methods, physical structure, and voltage scales for manipulation - have…

cond-mat.mes-hall2013★ 96 cited

Fast coherent manipulation of three-electron states in a double quantum dot

Zhan Shi, C. B. Simmons, Daniel R. Ward +9

A fundamental goal in the manipulation of quantum systems is the achievement of many coherent oscillations within the characteristic dephasing time T2*[1]. Most manipulations of el…

cond-mat.mes-hall2012★ 109 cited

Coherent Quantum Oscillations in a Silicon Charge Qubit

Zhan Shi, C. B. Simmons, Daniel. R. Ward +10

Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomoge…

cond-mat.mes-hall2011★ 92 cited

Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot

J. R. Prance, Zhan Shi, C. B. Simmons +8

We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade…

cond-mat.mes-hall2011★ 71 cited

Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot

Zhan Shi, C. B. Simmons, J. R. Prance +6

We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective tw…

cond-mat.mes-hall2010★ 167 cited

Tunable spin-selective loading of a silicon spin qubit

C. B. Simmons, J. R. Prance, B. J. Van Bael +8

The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attr…