675 citations · 1.2k across the 7 of their papers we have counts for
7 papers
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
David J. Christle, Paul V. Klimov, Charles F. de las Casas +11
The divacancies in SiC are a family of paramagnetic defects that show promise for quantum communication technologies due to their long-lived electron spin coherence and their optic…
Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
William F. Koehl, Berk Diler, Samuel J. Whiteley +4
Spins bound to point defects are increasingly viewed as an important resource for solid-state implementations of quantum information technologies. In particular, there is a growing…
Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions
Matthias Niethammer, Matthias Widmann, Sang-Yun Lee +6
Point defects in solids promise precise measurements of various quantities. Especially magnetic field sensing using the spin of point defects has been of great interest recently. W…
Theoretical model of the dynamic spin polarization of nuclei coupled to paramagnetic point defects in diamond and silicon carbide
Viktor Ivády, Krisztián Szász, Abram L. Falk +6
Dynamic nuclear spin polarization (DNP) mediated by paramagnetic point defects in semiconductors is a key resource for both initializing nuclear quantum memories and producing nucl…
Coherent control of single spins in silicon carbide at room temperature
Matthias Widmann, Sang-Yun Lee, Torsten Rendler +15
Spins in solids are cornerstone elements of quantum spintronics. Leading contenders such as defects in diamond, or individual phosphorous dopants in silicon have shown spectacular…
Theoretical unification of hybrid-DFT and DFT+U methods for the treatment of localized orbitals
Viktor Ivády, Rickard Armiento, Krisztián Szász +3
We formulate the on-site occupation dependent exchange correlation energy and effective potential of hybrid functionals for localized states and connect them to the on-site correct…
The role of screening in the density functional applied on transition metal defects in semiconductors
V. Ivády, I. A. Abrikosov, E. Janzén +1
We study selected transition metal related point defects in silicon and silicon carbide semiconductors by a range separated hybrid density functional (HSE06). We find that HSE06 do…