91 citations · 233 across the 9 of their papers we have counts for
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Artificial control of the bias-voltage dependence of tunnelling anisotropic magnetoresistance using quantization in a single-crystal ferromagnet
Iriya Muneta, Toshiki Kanaki, Shinobu Ohya +1
A major issue in the development of spintronic memory devices is the reduction of the power consumption for the magnetization reversal. For this purpose, the artificial control of…
Alternative interpretation of the recent experimental results of angle-resolved photoemission spectroscopy on GaMnAs [Sci. Rep. 6, 27266 (2016)]
Masaki Kobayashi, Shinobu Ohya, Iriya Muneta +8
Clarification of the position of the Fermi level () is important in understanding the origin of ferromagnetism in the prototypical ferromagnetic semiconductor Ga$_{1-…
Unveiling the impurity band inducing ferromagnetism in magnetic semiconductor (Ga,Mn)As
Masaki Kobayashi, Iriya Muneta, Yukiharu Takeda +8
(Ga,Mn)As is a paradigm diluted magnetic semiconductor which shows ferromagnetism induced by doped hole carriers. With a few controversial models emerged from numerous experimental…
Digging up bulk band dispersion buried under a passivation layer
Masaki Kobayashi, Iriya Muneta, Thorsten Schmitt +5
Atomically controlled crystal growth of thin films has established foundations of nanotechnology aimed at the development of advanced functional devices. Crystallization under non-…
Valence-band structure of ferromagnetic semiconductor (InGaMn)As
Shinobu Ohya, Iriya Muneta, Yufei Xin +2
To clarify the whole picture of the valence-band structures of prototype ferromagnetic semiconductors (III,Mn)As (III: In and Ga), we perform systematic experiments of the resonant…
Anomalous Fermi level behavior in GaMnAs at the onset of ferromagnetism
Iriya Muneta, Hiroshi Terada, Shinobu Ohya +1
We present the systematic study of the resonant tunneling spectroscopy on a series of ferromagnetic-semiconductor Ga1-xMnxAs with the Mn content x from ~0.01 to 3.2%. The Fermi lev…
Comment on "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel
Shinobu Ohya, Kenta Takata, Iriya Muneta +2
We comment on the recent paper "Reconciling results of tunnelling experiments on (Ga,Mn)As" arXiv:1102.3267v2 by Dietl and Sztenkiel. They claimed that the oscillations observed in…
Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers
Shinobu Ohya, Iriya Muneta, Masaaki Tanaka
We investigate the spin-dependent tunneling properties in a three-terminal III-V-based ferromagnetic-semiconductor heterostructure with a 2.5-nm-thick GaMnAs quantum well (QW) and…
GaMnAs-based magnetic tunnel junctions with an AlMnAs barrier
Shinobu Ohya, Iriya Muneta, Pham Nam Hai +1
We investigate the spin-dependent transport of GaMnAs-based magnetic tunnel junctions (MTJs) containing a paramagnetic AlMnAs barrier with various thicknesses. The barrier height o…