108 citations · 218 across the 5 of their papers we have counts for
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Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates
Meng Qi, Guowang Li, Satyaki Ganguly +8
We report the first realization of molecular beam epitaxy grown strained GaN quantum well field-effect transistors on single-crystal bulk AlN substrates. The fabricated double hete…
Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits
Huili Grace Xing, Bo Song, Mingda Zhu +4
Owing to the large breakdown electric field, wide bandgap semiconductors such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching a…
Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes
Meng Qi, Guowang Li, Vladimir Protasenko +10
This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual ma…