29 citations · 57 across the 4 of their papers we have counts for
4 papers · 1 filter
Effects of biased and unbiased illuminations on dopant-free GaAs/AlGaAs 2DEGs
A. Shetty, F. Sfigakis, W. Y. Mak +16
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased (gates at a positiv…
Ultra-shallow quantum dots in an undoped GaAs/AlGaAs 2D electron gas
W. Y. Mak, F. Sfigakis, K. Das Gupta +7
We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitax…
Linear non-hysteretic gating of a very high density 2DEG in an undoped metal-semiconductor-metal sandwich structure
K. Das Gupta, A. F. Croxall, W. Y. Mak +5
Modulation doped GaAs-AlGaAs quantum well based structures are usually used to achieve very high mobility 2-dimensional electron (or hole) gases. Usually high mobilities ($>10^{7}{…
Distinguishing impurity concentrations in GaAs and AlGaAs, using very shallow undoped heterostructures
W. Y. Mak, K. Das Gupta, H. E. Beere +3
We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structur…