most citedInterface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

6 citations · 6 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2021★ 6 cited

Interface recombination in Ga- and N-polar GaN/(Al,Ga)N quantum wells grown by molecular beam epitaxy

Thomas Auzelle, Chiara Sinito, Jonas Lähnemann +5

We explore and systematically compare the morphological, structural and optical properties of GaN/(Al,Ga)N multiple quantum wells (MQWs) grown by plasma-assisted molecular beam epi…