17 citations · 33 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2011★ 17 cited
Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures
Kristian Berland, Thorvald G Andersson, Per Hyldgaard
Inversion- and depletion-regions generally form at the interfaces between doped leads (cladding layers) and the active region of polar heterostructures like AlN/GaN and other nitri…
cond-mat.mes-hall2010★ 16 cited
Temperature stability of intersubband transitions in AlN/GaN quantum wells
Kristian Berland, Martin Stattin, Rashid Farivar +5
Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different tempe…