Temperature stability of intersubband transitions in AlN/GaN quantum wells

Abstract

Temperature dependence of intersubband transitions in AlN/GaN multiple quantum wells grown with molecular beam epitaxy is investigated both by absorption studies at different temperatures and modeling of conduction-band electrons. For the absorption study, the sample is heated in increments up to $400^{\circ }$C. The self-consistent Schrödinger-Poisson modeling includes temperature effects of the band-gap and the influence of thermal expansion on the piezoelectric field. We find that the intersubband absorption energy decreases only by $\sim 6$ meV at $400^{\circ }$C relative to its room temperature value.

References in corpus (1)

• Macroscopic polarization and band offsets at nitride heterojunctions

Cited by in corpus (3)

• Polarization-balanced design of AlN/GaN heterostructures: Application to double-barrier structures
• Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures
• A general solution to the Schrödinger-Poission equation for charged hard wall: Application to potential profile of an AlN/GaN barrier structure