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20152022
most citedA physical model for the reverse leakage current in (In,Ga)N/GaN light-emitting diodes based on nanowires

41 citations · 81 across the 4 of their papers we have counts for

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physics.app-ph2022★ 10 cited

Study and characterization of GaN MOS capacitors: planar versus trench topographies

K. Mukherjee, C. De Santi, S. You +9

Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of…