30 citations · 40 across the 2 of their papers we have counts for
3 papers
physics.app-ph2022★ 10 cited
Study and characterization of GaN MOS capacitors: planar versus trench topographies
K. Mukherjee, C. De Santi, S. You +9
Developing high quality GaN/dielectric interfaces is a fundamental step for manufacturing GaN vertical power transistors. In this paper, we quantitatively investigate the effect of…
physics.app-ph2021★ 30 cited
Positive and negative charge trapping GaN HEMTs: interplay between thermal emission and transport-limited processes
A. Nardo, C. De Santi, C. Koller +5
This paper investigates the kinetics of buffer trapping in GaN-based normally-off high-voltage transistors. The analysis was carried out on transfer-length method (TLM) structures.…
cond-mat.mes-hall2017
The effect of the three-dimensional strain variation on the emission properties of light-emitting diodes based on (In,Ga)N/GaN nanowires
M. Musolino, F. Sacconi, A. Tahraoui +5
In the experimental electroluminescence (EL) spectra of light-emitting diodes (LEDs) based on N-polar (In,Ga)N/GaN nanowires (NWs), we observed a double peak structure. The relativ…