86 citations · 115 across the 6 of their papers we have counts for
4 papers · 1 filter
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
Camilla Coletti, Stiven Forti, Alessandro Principi +10
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experi…
Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene using IR Reflection Spectroscopy
B. K. Daas, W. K. Nomani, K. M. Daniels +3
We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements sho…
Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes
Feng Zhao, Mohammad M. Islam, Biplob K. Daas +1
A quantitative study was performed to investigate the impact of crystallographic dislocation defects, 21 including screw dislocation, basal plane dislocation, and threading edge di…
Doping Dependence of Thermal Oxidation on n-type 4H-SiC
B. K. Daas, M. M. Islam, I. A. Chowdhury +3
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitroge…