86 citations · 115 across the 6 of their papers we have counts for
6 papers
Revealing the electronic band structure of trilayer graphene on SiC: An angle-resolved photoemission study
Camilla Coletti, Stiven Forti, Alessandro Principi +10
In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric field dependent electronic properties. However, a direct and well-resolved experi…
Molecular Gas Adsorption Induced Carrier Transport Studies of Epitaxial Graphene using IR Reflection Spectroscopy
B. K. Daas, W. K. Nomani, K. M. Daniels +3
We investigate molecular adsorption doping by electron withdrawing NO2 and electron donating NH3 on epitaxial graphene grown on C-face SiC substrates. Amperometric measurements sho…
Polariton Enhanced IR Reflection Spectra of Epitaxial Graphene on SiC
B. K. Daas, K. M. Daniels, T. S. Sudarshan +1
We show ~10x polariton-enhanced infrared reflectivity of epitaxial graphene on 4H-SiC, in SiC's restrahlen band (8-10um). By fitting measurements to theory, we extract the thicknes…
Graphene to Graphane: Novel Electrochemical Conversion
Kevin M. Daniels, B. Daas, R. Zhang +6
A novel electrochemical means to generate atomic hydrogen, simplifying the synthesis and controllability of graphane formation on graphene is presented. High quality, vacuum grown…
Effect of crystallographic dislocations on the reverse performance of 4H-SiC p-n diodes
Feng Zhao, Mohammad M. Islam, Biplob K. Daas +1
A quantitative study was performed to investigate the impact of crystallographic dislocation defects, 21 including screw dislocation, basal plane dislocation, and threading edge di…
Doping Dependence of Thermal Oxidation on n-type 4H-SiC
B. K. Daas, M. M. Islam, I. A. Chowdhury +3
The doping dependence of dry thermal oxidation rates in n-type 4H-SiC was investigated. The oxidation was performed in the temperature range 1000C to 1200C for samples with nitroge…