24 citations · 24 across the 1 of their papers we have counts for
2 papers
physics.app-ph2022★ 24 cited
Assessment of active dopants and p-n junction abruptness using in-situ biased 4D-STEM
Bruno C. da Silva, Zahra S. Momtaz, Eva Monroy +4
A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. 4D scanning transmission electron…
physics.app-ph2020
Correlated and in-situ electrical transmission electron microscopy studies and related membrane fabrication
Maria Spies, Zahra Sadre-Momtaz, Jonas Lähnemann +5
Understanding the interplay between the structure, composition and opto-electronic properties of semiconductor nano-objects requires combining transmission electron microscopy (TEM…