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Temperature dependence of the C hyperfine structure of the negatively-charged nitrogen-vacancy center in diamond
M. S. J. Barson, P. M. Reddy, S. Yang +3
The nitrogen-vacancy (NV) center is a well utilized system for quantum technology, in particular quantum sensing and microscopy. Fully employing the NV center's capabilities for me…
Radiation tolerance of two-dimensional material-based devices for space applications
Tobias Vogl, Kabilan Sripathy, Ankur Sharma +9
Characteristic for devices based on two-dimensional materials are their low size, weight and power requirements. This makes them advantageous for use in space instrumentation, incl…
Spin polarization through Intersystem Crossing in the silicon vacancy of silicon carbide
Wenzheng Dong, M. W. Doherty, Sophia E. Economou
Silicon carbide (SiC)-based defects are promising for quantum communications, quantum information processing, and for the next generation of quantum sensors, as they feature long c…
Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
D. A. Broadway, N. Dontschuk, A. Tsai +8
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precisi…
NV- - N+ pair centre in 1b diamond
Neil B. Manson, Morgan Hedges, Michael S +6
The study establishes that the degree of optically induced spin polarization that can be achieved for NVin 1b diamond is limited by the concentration of single substitutional…
Electronic structure of the neutral silicon-vacancy center in diamond
B. L. Green, M. W. Doherty, E. Nako +5
The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin li…