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High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes
Wan Sik Hwang, Amit Verma, Hartwin Peelaers +11
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smal…
Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
Wan Sik Hwang, Pei Zhao, Kristof Tahy +11
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap…
Schottky-to-Ohmic Crossover in Carbon Nanotube Transistor Contacts
Vasili Perebeinos, Jerry Tersoff, Wilfried Haensch
For carbon nanotube transistors, as for graphene, the electrical contacts are a key factor limiting device performance. We calculate the device characteristics as a function of nan…
Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors
Wan Sik Hwang, Maja Remskar, Rusen Yan +8
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobili…