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Free-Standing Epitaxial SrTiO Nanomembranes via Remote Epitaxy using Hybrid Molecular Beam Epitaxy
Hyojin Yoon, Tristan K. Truttmann, Fengdeng Liu +12
The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epita…
How to Report and Benchmark Emerging Field-Effect Transistors
Zhihui Cheng, Chin-Sheng Pang, Peiqi Wang +13
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device per…
Layer-dependence of dielectric response and water-enhanced ambient degradation of highly-anisotropic black As
Hwanhui Yun, Supriya Ghosh, Prafful Golani +2
Black arsenic (BAs) is a van der Waals layered material with a puckered honeycomb structure and has received increased interest due to its anisotropic properties and promising perf…
An Inside Look at the Ti-MoS2 Contact in Ultra-thin Field Effect Transistor with Atomic Resolution
Ryan J. Wu, Sagar Udyavara, Rui Ma +5
Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interfa…
Band Alignment of 2D Semiconductors for Designing Heterostructures with Momentum Space Matching
V. Ongun Özçelik, Javad G. Azadani, Ce Yang +2
We present a comprehensive study of the band alignments of two-dimensional (2D) semiconducting materials and highlight the possibilities of forming momentum-matched type I, II and…