3 papers
quant-ph2026
Revealing and reducing growth-induced interfacial disorder in preferentially aligned nitrogen-vacancy centers in diamond
Cheng-I Ho, Marina Davydova, Patrik Straňák +6
Nitrogen-vacancy (NV) centers in chemical-vapor-deposition (CVD) diamond can form preferentially oriented ensembles with high sensing performance and low densities of lattice defec…
cond-mat.mtrl-sci2026
Delta-Doped Diamond via in-situ Plasma-Distance Control
Philip Schätzle, Felix Hoffmann, Sven Mägdefessel +3
We present an approach for the CVD growth of diamond, where the sample is placed in a defined distance from the reactor baseplate, to which the plasma couples. We observe two previ…
cond-mat.mtrl-sci2025
Chemical Vapor Deposition of Nitrides by Carbon-free Brominated Precursors
Stefano Leone, Teresa Duarte, Hanspeter Menner +6
The epitaxial growth of group 13-nitride semiconductors (GaN, AlN, and AlGaN alloys) for the mass production and fabrication of high-frequency and high-power devices relies on meta…