High-field Spatial Imaging of Charge Transport in Silicon at Low Temperature

C. Stanford, R. A. Moffatt, N. A. Kurinsky +9

We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We…