activity
20102026
most citedNew constraints on oscillation parameters from appearance and disappearance in the NOvA experiment

170 citations · 905 across the 84 of their papers we have counts for

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6 papers · 1 filter

cond-mat.mes-hall2023

Quantum interference of pseudospin-1 fermions

Adesh Singh, G. Sharma

Quantum interference is studied in a three-band model of pseudospin-one fermions in the lattice. We derive a general formula for magnetoconductivity that predicts…

cond-mat.mes-hall2022★ 8 cited

Anomalous transport in pseudospin-1 fermions

Adesh Singh, G. Sharma

Electronic transport in the model of pseudospin-1 fermions with a finite gap is studied within the semiclassical Boltzmann approximation. We show that coupling of…

cond-mat.mes-hall2020★ 11 cited

Photo-Seebeck effect in single-crystalline bismuth telluride topological insulator

Anand Nivedan, Arvind Singh, Sandeep Kumar +1

Bismuth telluride is a low energy bulk band-gap topological system with conducting surface states. Besides its very good thermoelectric properties, it also makes a very good candid…

cond-mat.mes-hall2020★ 11 cited

Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator BiTe

Anand Nivedan, Kamal Das, Sandeep Kumar +4

We report a metal-insulator like transition in single crystalline 3D topological insulator Bi2Te3 at a temperature of 230K in presence of an external magnetic field applied normal…

cond-mat.mes-hall2017★ 3 cited

STM/S study of electronic inhomogeneity evolution with gate voltage in graphene: role of screening and charge-state of interface defects

Anil Kumar Singh, Anjan Kumar Gupta

Evolution of electronic inhomogeneities with back-gate voltage in graphene on SiO was studied using room temperature scanning tunneling microscopy and spectroscopy. The reversa…

cond-mat.mes-hall2017

Reversible control of interface-water induced carrier density in graphene-on-SiO by thermal cycling under gate-voltage

Anil Kumar Singh, Anjan Kumar Gupta

A reversible handle on graphene carrier density, other than the gate electric field, is desirable for memory applications of graphene. Our experiments show that the commonly observ…