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cond-mat.mtrl-sci2011★ 24 cited
Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching
Z. Q. Liu, D. P. Leusink, W. M. Lü +13
We report on the electric-field-induced reversible metal-insulator transition (MIT) of the insulating LaAlO3 thin films observed in metal/LaAlO3/Nb-SrTiO3 heterostructures. The swi…
cond-mat.mes-hall2011★ 111 cited
The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation
S. Mathew, T. K. Chan, D. Zhan +7
The use of graphene electronics in space will depend on the radiation hardness of graphene. The damage threshold of graphene samples, subjected to 2 MeV proton irradiation, was fou…