The effect of layer number and substrate on the stability of graphene under MeV proton beam irradiation
arXiv:1101.5744 · doi:10.1016/j.carbon.2010.12.057
Abstract
The use of graphene electronics in space will depend on the radiation hardness of graphene. The damage threshold of graphene samples, subjected to 2 MeV proton irradiation, was found to increase with layer number and also when the graphene layer was supported by a substrate. The thermal properties of graphene as a function of the number of layers or as influenced by the substrate argue against a thermal model for the production of damage by the ion beam. We propose a model of intense electronically-stimulated surface desorption of the atoms as the most likely process for this damage mechanism.
arXiv comment20 pages, 5 figures
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Cited by in corpus (6)
- Radiation tolerance of two-dimensional material-based devices for space applications
- Understanding the interaction between energetic ions and freestanding graphene towards practical 2D perforation
- Defect Sizing, Separation and Substrate Effects in Ion-Irradiated Monolayer 2D Materials
- Ion irradiation tolerance of graphene as studied by atomistic simulations
- Point Defects in Twisted Bilayer Graphene: A Density Functional Theory Study
- Impact of 150keV and 590keV proton irradiation on monolayer MoS2