52 citations · 196 across the 11 of their papers we have counts for
10 papers · 1 filter
Two-dimensional field-effect transistors based on lateral heterojunctions of transition metal dichalcogenides: dissipative quantum transport modeling
Giuseppe Lovarelli, Fabrizio Mazziotti, Demetrio Logoteta +1
Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors…
Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs
Demetrio Logoteta, Jiang Cao, Marco Pala +2
We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With…
Dissipative Transport and Phonon Scattering Suppression via Valley Engineering in Single-Layer Antimonene and Arsenene Field-Effect Transistors
Jiang Cao, Yu Wu, Hao Zhang +3
Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) thanks to their unique mechanical properties and enhanced el…
A cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions
Demetrio Logoteta, Jiang Cao, Marco Pala +3
The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations…
A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect
D. Logoteta, M. G. Pala, J. Choukroun +2
We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energ…
High-performance solution of the transport problem in a graphene armchair structure with a generic potential
Demetrio Logoteta, Paolo Marconcini, Claudio Bonati +2
We propose an efficient numerical method to study the transport properties of armchair graphene ribbons in the presence of a generic external potential. The method is based on a co…