activity
20112025
most citedArmchair graphene nanoribbons: PT-symmetry breaking and exceptional points without dissipation

52 citations · 196 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2025

Tuning Ultra-Narrow Direct Bandgap in alpha-Sn Nanocrystals: A CMOS-Compatible Approach for THz Applications

Tiziano Bertoli, Elena Stellino, Francesco Minati +14

alpha-Sn has recently been attracting significant interest due to its unique electronic properties. However, this allotrope of Sn is stable only below 13 °C and alternative options…

cond-mat.mes-hall2023

Two-dimensional field-effect transistors based on lateral heterojunctions of transition metal dichalcogenides: dissipative quantum transport modeling

Giuseppe Lovarelli, Fabrizio Mazziotti, Demetrio Logoteta +1

Reducing the contact resistance of field-effect transistors based on two-dimensional materials is one of the key improvements required to enable the integration of such transistors…

cond-mat.mes-hall2021

Intrinsic subthermionic capabilities and high performance of easy-to-fabricate monolayer metal dihalide MOSFETs

Demetrio Logoteta, Jiang Cao, Marco Pala +2

We investigate the design of steep-slope metal-oxide-semiconductor field-effect transistors (MOSFETs) exploiting monolayers of transition metal dihalides as channel materials. With…

cond-mat.mes-hall2021★ 12 cited

Dissipative Transport and Phonon Scattering Suppression via Valley Engineering in Single-Layer Antimonene and Arsenene Field-Effect Transistors

Jiang Cao, Yu Wu, Hao Zhang +3

Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs) thanks to their unique mechanical properties and enhanced el…

cond-mat.mes-hall2020

A cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions

Demetrio Logoteta, Jiang Cao, Marco Pala +3

The availability of transistors capable of operating at low supply voltage is essential to improve the key performance metric of computing circuits, i.e., the number of operations…

cond-mat.mes-hall2020★ 33 cited

A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect

D. Logoteta, M. G. Pala, J. Choukroun +2

We propose a steep-slope MoS2-nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energ…