36 citations · 66 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2012★ 30 cited
Observation of Negative Contact Resistances in Graphene Field-Effect Transistors
Ryo Nouchi, Tatsuya Saito, Katsumi Tanigaki
The gate-voltage (VG) dependence of the contact resistance (RC) in graphene field-effect transistors is characterized by the transmission line model. The RC-VG characteristics of A…
cond-mat.mtrl-sci2011★ 36 cited
Determination of Carrier Type Doped from Metal Contacts to Graphene by Channel-Length-Dependent Shift of Charge Neutrality Points
Ryo Nouchi, Tatsuya Saito, Katsumi Tanigaki
A method for determining the type of charge carrier, electron or hole, which is transferred from metal contacts to graphene, is described. The Dirac point is found to shift toward…