Determination of Carrier Type Doped from Metal Contacts to Graphene by Channel-Length-Dependent Shift of Charge Neutrality Points

Abstract

A method for determining the type of charge carrier, electron or hole, which is transferred from metal contacts to graphene, is described. The Dirac point is found to shift toward more negative (positive) gate voltages for electron (hole) doping by shortening of the interelectrode spacing. The shift of the Dirac point is accompanied by an enhancement of the electron-hole conductivity asymmetry. Experimentally determined carrier types may be explained in terms of the metal work functions modified by interactions with graphene.

arXiv comment12 pages, 4 figures

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• Radio-frequency reflectometry in bilayer graphene devices utilizing micro graphite back-gates
• Path of the current flow at the metal contacts of graphene field-effect transistors with distorted transfer characteristics
• Reversible doping of graphene field effect transistors by molecular hydrogen: the role of the metal/graphene interface
• Experimental signature of bandgap opening in bilayer graphene at metal contacts
• Adsorbates as a charge-carrier reservoir for electrostatic carrier doping to graphene
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• Superconducting Cavity-Based Sensing of Band Gaps in 2D Materials