929 citations · 4.4k across the 32 of their papers we have counts for
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Breaking the mutual exclusivity between metallicity and ferroelectricity in a non-polar covalent semiconductor via orbital selective doping
Hui Li, Yunfan Yang, Junquan Huang +18
The mutual exclusion of ferroelectricity and metallic conductivity is a long-standing tenet because itinerant electrons screen long-range Coulomb forces that stabilize the bulk pol…
Unravelling a Zigzag Pathway for Hot-Carrier Collection at CH3NH3PbI3/Graphene Interfaces
Jin Zhang, Hao Hong, Jincan Zhang +4
The capture of photoexcited deep-band hot carriers, excited by photons with energies far above the bandgap, is of significant importance for photovoltaic and photoelectronic applic…
Ultrafast, highly-sensitive infrared photodetectors based on two-dimensional oxyselenide crystals
Jianbo Yin, Zhenjun Tan, Hao Hong +10
Infrared detection and sensing is deeply embedded in modern technology and human society and its development has always been benefitting from the discovery of new photoelectric res…
Out-of-plane Piezoelectricity and Ferroelectricity in Layered -In2Se3 Nano-flakes
Yu Zhou, Di Wu, Yihan Zhu +9
Piezoelectric and ferroelectric properties in the two dimensional (2D) limit are highly desired for nanoelectronic, electromechanical, and optoelectronic applications. Here we repo…
Ultrafast Epitaxial Growth of Metre-Sized Single-Crystal Graphene on Industrial Cu Foil
Xiaozhi Xu, Zhihong Zhang, Jichen Dong +20
A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For ma…
Raman spectroscopic characterization of stacking configuration and interlayer coupling of twisted multilayer graphene grown by chemical vapor deposition
Jiang-Bin Wu, Huan Wang, Xiao-Li Li +2
Multilayer graphene (MLG) grown by chemical vapor deposition (CVD) is a promising material for electronic and optoelectronic devices. Understanding the stacking configuration and i…
Magnetic-field-assisted electron confinement and valley splitting in strained graphene
Jun-Fang Liu, Ke-Ke Bai, Jia-Bin Qiao +5
Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report th…
Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
Desheng Kong, Judy J. Cha, Keji Lai +8
Bi2Se3 is a topological insulator with metallic surface states residing in a large bulk bandgap. It is believed that Bi2Se3 gets additional n-type doping after exposure to atmosphe…
Magnetic Doping and Kondo Effect in Bi2Se3 Nanoribbons
Judy J. Cha, James R. Williams, Desheng Kong +6
A simple surface band structure and a large bulk band gap have allowed Bi2Se3 to become a reference material for the newly discovered three-dimensional topological insulators, whic…
Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance Microscopy
Keji Lai, Hailin Peng, Worasom Kundhikanjana +6
Driven by interactions due to the charge, spin, orbital, and lattice degrees of freedom, nanoscale inhomogeneity has emerged as a new theme for materials with novel properties near…