58 citations · 114 across the 3 of their papers we have counts for
3 papers
Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices
Dominic Waldhoer, Christian Schleich, Jakob Michl +9
Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegrap…
Physics-Based and Closed-Form Model for Cryo-CMOS Subthreshold Swing
Arnout Beckers, Jakob Michl, Alexander Grill +7
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance comp…
NBTI in Nanoscale MOSFETs - The Ultimate Modeling Benchmark
Tibor Grasser, Karina Rott, Hans Reisinger +3
After nearly half a century of research into the bias temperature instability (BTI), two classes of models have emerged as the strongest contenders: one class of models, the reacti…