Wafer-Level 1/f Noise Characterization of Scaled P-Type Nanosheets and Comparison with Planar HKMG Transistors

Ruben Asanovski, Anabela Veloso, Ben Kaczer +2

We present a comprehensive wafer-level 1/f noise study of scaled Gate-All-Around (GAA) p-type nanosheet transistors and benchmark them against large-area planar High- \k{appa} Meta…