98 citations · 272 across the 7 of their papers we have counts for
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Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
Timothy J. McArdle, Jack O. Chu, Yu Zhu +6
We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuu…
Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill +12
Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated,…
100 GHz Transistors from Wafer Scale Epitaxial Graphene
Yu-Ming Lin, Christos Dimitrakopoulos, Keith A. Jenkins +4
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gat…