98 citations · 272 across the 7 of their papers we have counts for
7 papers
Infrared Spectroscopy of Wafer-Scale Graphene
Hugen Yan, Fengnian Xia, Wenjuan Zhu +5
We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carr…
Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology
Yu-Ming Lin, Damon B. Farmer, Keith A. Jenkins +7
This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates.…
Layer Number Determination and Thickness-dependent Properties of Graphene Grown on SiC
Wenjuan Zhu, Christos Dimitrakopoulos, Marcus Freitag +1
The electronic properties of few-layer graphene grown on the carbon-face of silicon carbide (SiC) are found to be strongly dependent on the number of layers. The carrier mobility i…
Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
Timothy J. McArdle, Jack O. Chu, Yu Zhu +6
We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuu…
Multi-carrier Transport in Epitaxial Multi-layer Graphene
Yu-Ming Lin, Christos Dimitrakopoulos, Damon B. Farmer +9
Variable-field Hall measurements were performed on epitaxial graphene grown on Si-face and C-face SiC. The carrier transport involves essentially a single-type of carrier in few-la…
Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill +12
Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated,…
100 GHz Transistors from Wafer Scale Epitaxial Graphene
Yu-Ming Lin, Christos Dimitrakopoulos, Keith A. Jenkins +4
High-performance graphene field-effect transistors have been fabricated on epitaxial graphene synthesized on a two-inch SiC wafer, achieving a cutoff frequency of 100 GHz for a gat…