Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors

Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill +12

Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated,…