98 citations · 137 across the 4 of their papers we have counts for
4 papers
Multilayer epitaxial graphene formed by pyrolysis of polycrystalline silicon-carbide grown on c-plane sapphire substrates
Timothy J. McArdle, Jack O. Chu, Yu Zhu +6
We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450°C in vacuu…
Cratered Lorentzian response of driven microwave superconducting nanowire-bridged resonators: oscillatory and magnetic-field induced stochastic states
Matthew W. Brenner, Sarang Gopalakrishnan, Jaseung Ku +5
Microwave Fabry-Perot resonators containing nonlinear mesoscopic elements (such as superconducting nanowires) can be used to explore many-body circuit QED. Here, we report on obser…
Wafer-scale Epitaxial Graphene Growth on the Si-face of Hexagonal SiC (0001) for High Frequency Transistors
Christos Dimitrakopoulos, Yu-Ming Lin, Alfred Grill +12
Up to two layers of epitaxial graphene have been grown on the Si-face of two-inch SiC wafers exhibiting room-temperature Hall mobilities up to 1800 cm^2/Vs, measured from ungated,…
Reduced leakage current in Josephson tunnel junctions with codeposited barriers
Paul B. Welander, Timothy J. McArdle, James N. Eckstein
Josephson junctions were fabricated using two different methods of barrier formation. The trilayers employed were Nb/Al-AlOx/Nb on sapphire, where the first two layers were epitaxi…