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cond-mat.mtrl-sci2014
Energy renormalization and Mott transition in n-GaAs and n-GaN
P. N. Romanets, A. V. Sachenko
In this paper, we investigate renormalization of charge carrier effective masses and bandgap narrowing in n-GaAs and wurtzite-type n-GaN over a wide range of temperatures and dopan…
cond-mat.mtrl-sci2014
The features of contact resistivity behavior at helium temperatures for InP- and GaAs-based ohmic contacts
A. V. Sachenko, A. E. Belyaev, N. S. Boltovets +4
Contact resistivity rc of InP and GaAs based ohmic contacts was measured in the 4.2/300 K temperature range. Nonmonotonic dependences rc(T), with a minimum at temperature 50 K (150…